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| SavantIC Semiconductor www..com Product Specification Silicon PNP Power Transistors 2N5611A DESCRIPTION *With TO-66 package *Excellent safe operating area *Low collector saturation voltage APPLICATIONS *For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -100 -5 -5 25 150 -65~150 UNIT V V V A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT /W SavantIC Semiconductor www..com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-1A; IB=-0.1A IC=-2.5A ; VCE=-5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO,IB=0 VEB=-5V; IC=0 IC=-2.5A ; VCE=-5V IC=-0.5A ; VCE=-10V 30 60 MIN -100 2N5611A SYMBOL VCEO(SUS) VCEsat VBE ICBO ICEO IEBO hFE fT TYP. MAX UNIT V -0.5 -1.5 -0.1 -1.0 -0.1 150 V V mA mA mA MHz 2 SavantIC Semiconductor www..com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5611A Fig.2 outline dimensions 3 |
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